Defect-related infrared photoluminescence in Ge+-implanted SiO2 films

被引：57

作者：

Wu, XL ^{[1
]}

Gao, T

Siu, GG

Tong, S

Bao, XM

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiO2 films with Ge+ implantation at an energy of 60 keV and a dose of 1 x 10(16) cm(-2), followed by annealing at different temperature, exhibit a broad infrared photoluminescence (PL) at room temperature under an excitation of the 514.5 nm line of Ar+ laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energy redshifts. Spectral analysis and some experimental results from Raman scattering, electron spin resonance, and infrared spectroscopy strongly suggest that the infrared PL is mainly related to interfacial oxygen-deficient-type defects between the oxide and Ge nanocrystals. (C) 1999 American Institute of Physics. [S0003-6951(99)04717-8].

引用

页码：2420 / 2422

页数：3

共 23 条

[1] ZERO-DIMENSIONAL EXCITONS IN SEMICONDUCTOR CLUSTERS [J].

BRUS, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1909-1914

[2] RAMAN-SCATTERING FROM QUANTUM DOTS OF GE EMBEDDED IN SIO2 THIN-FILMS [J].

FUJII, M ;

HAYASHI, S ;

YAMAMOTO, K .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2692-2694

[3] Photoluminescence from Ge+-implanted SiO2 films on Si substrate and its mechanism [J].

Gao, T ;

Bao, XM ;

Yan, F ;

Tong, S .

PHYSICS LETTERS A, 1997, 232 (3-4) :321-325

[4] PREPARATION AND PROPERTIES OF GE MICROCRYSTALS EMBEDDED IN SIO2 GLASS-FILMS [J].

HAYASHI, R ;

YAMAMOTO, M ;

TSUNETOMO, K ;

KOHNO, K ;

OSAKA, Y ;

NASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (04) :756-759

[5] THERMAL ANNEALING OF GAS-EVAPORATED GE MICROCRYSTALS - A RAMAN AND ELECTRON-MICROSCOPIC STUDY [J].

HAYASHI, S ;

WAKAYAMA, H ;

OKADA, T ;

KIM, SS ;

YAMAMOTO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1987, 56 (01) :243-249

[6] ON THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE IN NANOMETER-SIZE GE CRYSTALLITES [J].

KANEMITSU, Y ;

UTO, H ;

MASUMOTO, Y ;

MAEDA, Y .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2187-2189

[7] QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA [J].

KIRK, CT .

PHYSICAL REVIEW B, 1988, 38 (02) :1255-1273

[8] EVIDENCE FOR DISORDER-INDUCED VIBRATIONAL-MODE COUPLING IN THIN AMORPHOUS SIO2-FILMS [J].

LANGE, P .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) :201-204

[9] VISIBLE PHOTOLUMINESCENCE OF GE MICROCRYSTALS EMBEDDED IN SIO2 GLASSY MATRICES [J].

MAEDA, Y ;

TSUKAMOTO, N ;

YAZAWA, Y ;

KANEMITSU, Y ;

MASUMOTO, Y .

APPLIED PHYSICS LETTERS, 1991, 59 (24) :3168-3170

[10] Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2 [J].

Min, KS ;

Shcheglov, KV ;

Yang, CM ;

Atwater, HA ;

Brongersma, ML ;

Polman, A .

APPLIED PHYSICS LETTERS, 1996, 69 (14) :2033-2035

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