Sizable room-temperature magnetoresistance in cobalt based magnetic tunnel junctions with out-of-plane anisotropy

被引：77

作者：

Carvello, Baptiste ^{[1
]}

Ducruet, Clarisse ^{[1
]}

Rodmacq, Bernard ^{[1
]}

Auffret, Stephane ^{[1
]}

Gautier, Eric ^{[1
]}

Gaudin, Gilles ^{[1
]}

Dieny, Bernard ^{[1
]}

机构：

[1] CEA, CNRS, SPINTEC, URA 2512, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2894198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron alumina based magnetic tunnel junctions (MTJs) using electrodes with out-of-plane magnetic anisotropy were prepared and characterized. Both electrodes are industry-compatible Co/Pt multilayers. The magnetic properties of the unpatterned samples have been investigated through superconducting quantum interference device (SQUID) magnetometry and extraordinary Hall effect: both electrodes have fully out-of-plane magnetic moments and nonoverlapping coercive fields. Transport measurements on the submicron MTJs showed a magnetoresistance (MR) ratio reaching 8% at room temperature. Nanopillars with diameters of 800, 400, and 200 nm patterned from the same wafer show the expected out-of-plane magnetic properties and similar resistancexarea products (RA) and MR ratios. The I(V) characteristics of pillars with diameters of 800 and 400 nm could be accounted for with reasonable barrier heights and widths. (c) 2008 American Institute of Physics.

引用

页数：3

共 11 条

[1] TUNNELING CONDUCTANCE OF ASYMMETRICAL BARRIERS [J].

BRINKMAN, WF ;

DYNES, RC ;

ROWELL, JM .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1915-&

[2] Comparison of the interfacial structure between MgO and Al-O oxidation layers for perpendicular magnetic tunnel junction [J].

Chen, Tzu-Jung ;

Canizo-Cabrera, A. ;

Chang, Che-Hao ;

Liao, Kuo-An ;

Li, Simon C. ;

Hou, Chun-Kan ;

Wu, Te-ho .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[3] MTJ elements with MgO barrier using RE-TM amorphous layers for perpendicular MRAM [J].

Hatori, T. ;

Ohmori, H. ;

Tada, M. ;

Nakagawa, S. .

IEEE TRANSACTIONS ON MAGNETICS, 2007, 43 (06) :2331-2333

[4] Role of tunneling matrix elements in determining the magnitude of the tunneling spin polarization of 3d transition metal ferromagnetic alloys -: art. no. 247203 [J].

Kaiser, C ;

van Dijken, S ;

Yang, SH ;

Yang, HS ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2005, 94 (24)

[5] Magnetic properties of Co/Pt multilayers deposited on silicon dot arrays [J].

Landis, S ;

Rodmacq, B ;

Dieny, B .

PHYSICAL REVIEW B, 2000, 62 (18) :12271-12281

[6] Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers [J].

Lim, D ;

Kim, S ;

Lee, SR .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[7] Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory [J].

Nishimura, N ;

Hirai, T ;

Koganei, A ;

Ikeda, T ;

Okano, K ;

Sekiguchi, Y ;

Osada, Y .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :5246-5249

[8] Non-volatile magnetic random access memories (MRAM) [J].

Sousa, RC ;

Prejbeanu, IL .

COMPTES RENDUS PHYSIQUE, 2005, 6 (09) :1013-1021

[9] Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the Al2O3/CoFe interface [J].

Sun, JJ ;

Freitas, PP .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5264-5266

[10] 70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers [J].

Wang, DX ;

Nordman, C ;

Daughton, JM ;

Qian, ZH ;

Fink, J .

IEEE TRANSACTIONS ON MAGNETICS, 2004, 40 (04) :2269-2271

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