Applications of II-VI diluted magnetic semiconductors for magneto-electronics

被引：42

作者：

Ferrand, D

Wasiela, A

Tatarenko, S

Cibert, J

Richter, G

Grabs, P

Schmidt, G

Molenkamp, LW

Dietl, T

机构：

[1] Univ Grenoble 1, CNRS, Equipe Nanophys & Semicond, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 119卷 / 4-5期

关键词：

semiconductors; magnetic films and multi-layers; electronic transport;

D O I：

10.1016/S0038-1098(01)00174-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The discovery of carrier induced ferromagnetism in p-type doped diluted magnetic semiconductors (DMS) with Curie temperatures actually up to 110 K in Ga1-xMnxAs, as well as the demonstration of high spin injection efficiency observed from II-VI and III-V DMS [1,2] have recently renewed strongly the interest in DMS. In this paper, we present an overview of the recent experiments we have pet-formed on spin injection light emitting diodes using an n-type doped II-VI DMS layer as spin aligner and on p-type doped II-VI magnetic heterostructures: Cd1-xMnxTe quantum wells and Zn1-xMnxTe epilayers. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：237 / 244

页数：8

共 36 条

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