Giant negative thermal expansion in Ge-doped anti-perovskite manganese nitrides

被引:571
作者
Takenaka, K [1 ]
Takagi, H
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
关键词
D O I
10.1063/1.2147726
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the discovery of a large negative thermal expansion (NTE) up to alpha=-25x10(-6) K-1 (alpha: coefficient of linear thermal expansion) in Ge-doped anti-perovskite manganese nitrides Mn(3)AN (A=Cu,Zn,Ga). This gigantic NTE is several to ten times higher than that of commercially available NTE materials. The discontinuous lattice expansion seen in pure Mn(3)AN is broadened by Ge substitution over a wide temperature window, at widest Delta T similar to 100 K, around room temperature. Such a large, isotropic and nonhysteretic NTE is desirable for practical applications. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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