Marangoni convection in a hemispheric molten silicon droplet and its control by an applied magnetic field

被引:4
作者
Okano, Y
Sakai, S
Yamada, H
Hoshikawa, K
Dost, S
机构
[1] Shizuoka Univ, Dept Mat Sci & Chem Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Univ Victoria, Dept Mech Engn, Victoria, BC V8W 3P6, Canada
[3] Shinshu Univ, Fac Educ, Nagano 3808544, Japan
关键词
D O I
10.3233/JAE-2003-286
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
A numerical simulation study was conducted for the "sessile drop method" that is one of the essential tools for conducting measurements of physical properties in droplets. The effect of the Marangoni convection on the maximum flow velocity in a hemispheric molten silicon droplet was examined. The maximum Reynolds number was correlated with the Marangoni and Biot numbers, and the surrounding temperature by Re-max = [-209.4T(a)(pi/2)/T-mp + 216.8] ... (BiMa) (when BiMa < 40) and Re-max = [-472.5T(a)(pi/2)/T-mp + 491.3] ... (BiMa)(2/3) (when BiMa > 40). Simulation results show that the application of a vertical magnetic field can suppress the flow in the droplet near the plate, and consequently prevent the movement of the drop, and give rise to a diffusion-limited-condition near the plate where accurate measurements of the physical properties of a melt can be made.
引用
收藏
页码:187 / 197
页数:11
相关论文
共 29 条
[1]
NUMERICAL-SIMULATION OF THERMOCAPILLARY BUBBLE MIGRATION UNDER MICROGRAVITY FOR LARGE REYNOLDS AND MARANGONI NUMBERS [J].
BALASUBRAMANIAM, R ;
LAVERY, JE .
NUMERICAL HEAT TRANSFER, 1989, 16 (02) :175-187
[2]
3-DIMENSIONAL VECTOR ANALYSIS OF THE SPATIAL COMPONENTS AND VOLTAGE MAGNITUDES OF THE P300 RESPONSE DURING DIFFERENT ATTENTIONAL STATES AND STIMULUS MODALITIES [J].
CLIFFORD, JO ;
WILLISTON, JS .
INTERNATIONAL JOURNAL OF PSYCHOPHYSIOLOGY, 1992, 12 (01) :1-10
[3]
A numerical simulation study for the effect of applied magnetic field in liquid phase electroepitaxy [J].
Dost, S ;
Liu, Y ;
Lent, B .
JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) :39-51
[4]
A MODEL FOR LIQUID-PHASE ELECTROEPITAXY UNDER AN EXTERNAL MAGNETIC-FIELD .1. THEORY [J].
DOST, S ;
QIN, Z .
JOURNAL OF CRYSTAL GROWTH, 1995, 153 (3-4) :123-130
[5]
Dost S, 2000, STUD APPL ELECTROMAG, V19, P17
[6]
DOST S, IN PRESS INT J ELECT
[7]
THE SURFACE-TENSION OF LIQUID SILICON [J].
HARDY, SC .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :456-460
[8]
Interfacial phenomena of molten silicon: Marangoni flow and surface tension [J].
Hibiya, T ;
Nakamura, S ;
Mukai, K ;
Niu, ZG ;
Imaishi, N ;
Nishizawa, S ;
Yoda, S ;
Koyama, M .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1998, 356 (1739) :899-909
[9]
Analysis of oxygen evaporation rate and dissolution rate concerning Czochralski Si crystal growth: Effect of Ar pressure [J].
Huang, XM ;
Saitou, K ;
Sakai, S ;
Terashima, K ;
Hoshikawa, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A) :3188-3193
[10]
Analysis of an oxygen dissolution process concerning Czochralski (CZ) Si crystal growth using the sessile drop method [J].
Huang, XM ;
Saitou, K ;
Sakai, S ;
Terashima, K ;
Hoshikawa, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (2B) :L193-L195