Tunnel diodes fabricated from CdSe nanocrystal monolayers

被引：45

作者：

Kim, SH ^{[1
]}

Markovich, G

Rezvani, S

Choi, SH

Wang, KL

Heath, JR

机构：

[1] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Angstrom CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 mu m(2). Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices. (C) 1999 American Institute of Physics. [S0003-6951(99)04502-7].

引用

页码：317 / 319

页数：3

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