GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy

被引：10

作者：

Hwang, WY ^{[1
]}

Baillargeon, JN ^{[1
]}

Chu, SNG ^{[1
]}

Sciortino, PF ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.590223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Successful growth of 1.3 and 1.55 mu m GaInAsP/InP multiquantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid-source molecular beam epitaxy was demonstrated. A 1.12 mu m wavelength GaInAsP planarization layer with a nominal thickness of 500-650 Angstrom was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers. (C) 1998 American Vacuum Society.

引用

页码：1422 / 1425

页数：4

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