Low threshold 1.3 mu m InAsP/GaInAsP lasers grown by solid-source molecular beam epitaxy

被引：6

作者：

Wamsley, CC

Koch, MW

Wicks, GW

机构：

[1] Institute of Optics, University of Rochester, Rochester

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

semiconductor lasers; multiple quantum wells; SSMBE;

D O I：

10.1016/S0022-0248(96)00949-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A threshold current density of 270 A/cm(2) has been measured for 2 mm long InAsP/GaInAsP broad area laser grown by solid source molecular beam epitaxy. To date, these are the lowest reported threshold current density 1.3 mu m lasers by any type of MBE growth technique. An optimum growth temperature of 465 degrees C was determined for InAsP by maximizing the photoluminescence intensity from a test structure modeled after the laser core, and a room-temperature photoluminescenced line width of 18 meV was measured on an actual laser growth.

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收藏

页码：42 / 45

页数：4

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