VERY-LOW THRESHOLD CURRENT-DENSITY 1.3-MU-M INASP/INP/INGAP/INP/GAINASP STRAIN-COMPENSATED MULTIPLE-QUANTUM-WELL LASERS

被引：13

作者：

KASUKAWA, A

YOKOUCHI, N

YAMANAKA, N

IWAI, N

机构：

[1] Yokohama R & D Laboratories, Furukawa Electric Co. Ltd., Yokohama 220, 2-4-3, Okano, Nishi-ku

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 20期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19951223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By newly introducing InGaP tensile strained layers as barriers of InAsP compressively strained multiple quantum wells and a thin InP intermediate layer between InGaP and InAsP. high crystalline quality InAsP/InP/InGaP strain-compensated multiple quantum wells were successfully grown by metal organic chemical vapour deposition on a (100) InP substrate. A very low threshold current density of 300A/cm(2) was obtained for triple InAsP/InP/InGaP quantum well lasers emitting at 1.3 mu m with a GaInAsP seperate-confinement layer.

引用

页码：1749 / 1750

页数：2

共 6 条

[1] 1.3-MU-M INASYP1-Y/INP STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].