1.3-MU-M INASYP1-Y/INP STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：30

作者：

IMAJO, Y ^{[1
]}

KASUKAWA, A ^{[1
]}

NAMEGAYA, T ^{[1
]}

KIKUTA, T ^{[1
]}

机构：

[1] FURUKAWA ELECT CORP LTD,YOKOHAMA R&D LABS,NISHI KU,YOKOHAMA 220,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the metalorganic chemical vapor deposition (MOCVD) growth of InAsyPl1-y/InP strained layer quantum wells and the successful lasing of novel InAsyP1-y/InP strained layer quantum well laser diodes at 1.3 mum for the first time. Full width at half maximum of room temperature photoluminescence was as narrow as 30.1 meV with a peak wavelength of 1.29 mum. A very low threshold current density of 0.45 kA/cm2 was obtained on broad contact lasers with a cavity length of 900 mum.

引用

页码：2506 / 2508

页数：3

共 15 条

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