NOVEL ETCHING TECHNIQUE FOR A BURIED HETEROSTRUCTURE GAINAS/ALGAINAS QUANTUM-WELL LASER DIODE

被引：5

作者：

KASUKAWA, A

BHAT, R

CANEAU, C

ZAH, CE

KOZA, MA

LEE, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel etching technique for the 1.5-mu-m GaInAs/AlGaInAs buried heterostructure quantum-well laser diode is developed. Tartaric acid is used for the etching of GaInAs and AlGaInAs layers for the first time. Using a three-step material-selective etching, a 3-mu-m-high mesa with about 1.5-mu-m-wide active layer and 3-mu-m-wide contact layer can be achieved with good reproducibility. Nearly flat surfaces were obtained after a two-step organometallic chemical vapor deposition growth. A low threshold current of 11 mA was obtained for a 570-mu-m-long cavity device.

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页码：1269 / 1271

页数：3

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