Epitaxial Heusler alloys: New materials for semiconductor spintronics

被引：89

作者：

Palmstrom, C ^{[1
]}

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

来源：

MRS BULLETIN | 2003年 / 28卷 / 10期

关键词：

crystallographic structure; epitaxial Heusler alloys; intermetallic compounds; magnetic properties; molecular-beam epitaxy (MBE); semiconductors; single crystals spin-polarized materials; spintronics; thin films;

D O I：

10.1557/mrs2003.213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

引用

页码：725 / 728

页数：4

共 37 条

[1] Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001) [J].