Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers

被引：48

作者：

Dong, JW

Chen, LC

Xie, JQ

Müller, TAR

Carr, DM

Palmstrom, CJ

McKernan, S

Pan, Q

James, RD

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Ctr Interfacial Engn, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Dept Aerosp Engn & Mech, Minneapolis, MN 55455 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.1326461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Angstrom and c=6.07 Angstrom). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature similar to 350 K. (C) 2000 American Institute of Physics. [S0021- 8979(01)02301-5].

引用

页码：7357 / 7359

页数：3

共 19 条

[1] SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2) [J].