EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)

被引：49

作者：

GUIVARCH, A

GUERIN, R

SECOUE, M

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 19期

关键词：

D O I：

10.1049/el:19870704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1004 / 1005

页数：2

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