UV-detector based on pn-heteroj unction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

被引：212

作者：

Ohta, H

Kamiya, M

Kamaiya, T

Hirano, M

Hosono, H

机构：

[1] ERATO, JST, Hosono Transparent ElectoAct Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2003年 / 445卷 / 02期

关键词：

nickel oxide; optoelectronic devices; photoconductivity; solid-phase-epitaxy; zinc oxide;

D O I：

10.1016/S0040-6090(03)01178-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A transparent ultraviolet (UV)-detector was fabricated using a high-quality pn-heterojunction diode composed of transparent oxide semiconductors, p-type NiO and n-type ZnO, and its UV-response was measured at room temperature. Transparent tri-layered oxide films of ZnO/NiO/ITO were heteroepitaxially grown on an YSZ (1 1 1) substrate by a pulsed-laser-deposition combined with a solid-phase-epitaxy technique and they were processed to fabricate a p-NiO/n-ZnO diode. The diodes exhibited a clear rectifying I-V characteristic with an ideality factor of similar to2 and a forward threshold voltage of similar to1 V. Although the photoresponsivity was fairly weak at the zero bias voltage, it was enhanced up to similar to0.3 AW(-1) by applying a reverse bias of -6 V under an irradiation of 360-nm light, which is comparable to that of commercial devices. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：317 / 321

页数：5

共 18 条

[1] Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar) [J].