Spray pyrolysis deposition of Sn2S3 thin films

被引:47
作者
Lopez, S
Granados, S
Ortiz, A
机构
[1] Inst. de Invest. en Materiales, UNAM, Coyoacan 04510, DF
关键词
D O I
10.1088/0268-1242/11/3/025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ternary compound (SnSnS3)-Sn-II-S-IV thin films have been prepared on Pyrex glass substrates by the spray pyrolysis process using tin chloride (SnCl2) and n, n-dimethylthiourea as starting materials. The depositions were carried out at a substrate temperature of 320 degrees C. The identification of the Sn2S3 phase was achieved by means of x-ray diffraction measurements. The optical reflectance and transmittance of the prepared films were used to obtain the variation of the refractive index and the extinction coefficient as a function of the wavelength. These calculated values were used to find the absorption coefficient and the optical bandgap and gave E(g) = 1.16 eV. From measurements of the conductance as a function of T-1, a dark activation energy was determined with a value of 1.02 eV.
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收藏
页码:433 / 436
页数:4
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