Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region

被引：127

作者：

Chen, ZH ^{[1
]}

Baklenov, O

Kim, ET

Mukhametzhanov, I

Tie, J

Madhukar, A

Ye, Z

Campbell, JC

机构：

[1] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA

[3] Univ Texas, Dept Elect Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.1356430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence (PL), PL excitation, and intra- and inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and inter- and intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application. (C) 2001 American Institute of Physics.

引用

页码：4558 / 4563

页数：6

共 20 条

[1]

Baklenov O., 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526), P171, DOI 10.1109/DRC.2000.877135

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].