Dopant mapping and strain analysis in B doped silicon structures using micro-Raman spectroscopy

被引：3

作者：

Bowden, M ^{[1
]}

Gardiner, DJ ^{[1
]}

Lourenço, MA ^{[1
]}

Hedley, J ^{[1
]}

Wood, D ^{[1
]}

Burdess, JS ^{[1
]}

Harris, AJ ^{[1
]}

机构：

[1] Northumbria Univ, Dept Chem & Life Sci, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

来源：

MICROELECTROMECHANICAL STRUCTURES FOR MATERIALS RESEARCH | 1998年 / 518卷

关键词：

D O I：

10.1557/PROC-518-239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Raman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.

引用

页码：239 / 244

页数：4

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