Stress and structural images of microindented silicon by Raman microscopy

被引:42
作者
Bowden, M [1 ]
Gardiner, DJ [1 ]
机构
[1] NORTHUMBRIA UNIV,DEPT CHEM & LIFE SCI,NEWCASTLE TYNE NE1 8ST,TYNE & WEAR,ENGLAND
关键词
Raman; silicon; stress; image; microindent;
D O I
10.1366/0003702971942123
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The microline focus spectrometer (MiFS) Raman imaging process is described and is used to investigate stress and structure defect patterns in micro-indented single-crystal silicon. Raman intensity, frequency, and bandwidth images are reported with 0.3-mu m pixel resolution, which reveal residual compressive stress distributions around the indentation site and areas of tensile stress at the crack tips. A previously unreported annular structural defect region, remote from the indent site, is observed in images where the indenter tip edges are aligned with the [110] direction of the silicon crystal.
引用
收藏
页码:1405 / 1409
页数:5
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