Coexistence of low threshold lasing and strong coupling in microcavities

被引：27

作者：

Lagoudakis, PG ^{[1
]}

Martin, MD

Baumberg, JJ

Malpuech, G

Kavokin, A

机构：

[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Clermont Ferrand, LASMEA, UMR 6602, F-63177 Clermont Ferrand, France

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 05期

关键词：

D O I：

10.1063/1.1643191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the coexistence of low threshold lasing and strong coupling in a high-quality semiconductor microcavity under near-resonant optical pumping. A sharp laser mode splits from the lower-polariton branch and approaches the bare cavity mode frequency as the pump power increases. The lasing is produced by low density localized exciton states, which are weakly coupled to the cavity mode. The appearance of this lasing mode distinguishes quantum-well excitons into those which are strongly or weakly coupled with the cavity mode. (C) 2004 American Institute of Physics.

引用

页码：2487 / 2489

页数：3

共 14 条

[1] Effect of inhomogeneous broadening on optical properties of excitons in quantum wells [J].

Andreani, LC ;

Panzarini, G ;

Kavokin, AV ;

Vladimirova, MR .

PHYSICAL REVIEW B, 1998, 57 (08) :4670-4680

[2] Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities -: art. no. 205310 [J].

Butté, R ;

Delalleau, G ;

Tartakovskii, AI ;

Skolnick, MS ;

Astratov, VN ;

Baumberg, JJ ;

Malpuech, G ;

Di Carlo, A ;

Kavokin, AV ;

Roberts, JS .

PHYSICAL REVIEW B, 2002, 65 (20) :2053101-2053109

[3] Asymmetric photoluminescence spectra from excitons in a coupled microcavity [J].

Emam-Ismail, M ;

Astratov, VN ;

Skolnick, MS ;

Whittaker, DM ;

Roberts, JS .

PHYSICAL REVIEW B, 2000, 62 (03) :1552-1555

[4] Laser emission from semiconductor microcavities: Transition from nonperturbative to perturbative regimes [J].

Fan, XD ;

Wang, HL ;

Hou, HQ ;

Hammons, BE .

PHYSICAL REVIEW B, 1997, 56 (23) :15256-15260

[5] SATURATION OF THE STRONG-COUPLING REGIME IN A SEMICONDUCTOR MICROCAVITY - FREE-CARRIER BLEACHING OF CAVITY POLARITONS [J].

HOUDRE, R ;

GIBERNON, JL ;

PELLANDINI, P ;

STANLEY, RP ;

OESTERLE, U ;

WEISBUCH, C ;

OGORMAN, J ;

ROYCROFT, B ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1995, 52 (11) :7810-7813

[6] Exciton-polariton lasing and amplification based on exciton-exciton scattering in CdTe microcavity quantum wells -: art. no. 165314 [J].

Huang, R ;

Yamamoto, Y ;

André, R ;

Bleuse, J ;

Muller, M ;

Ulmer-Tuffigo, H .

PHYSICAL REVIEW B, 2002, 65 (16) :1653141-1653147

[7] EXCITON OSCILLATOR STRENGTH IN QUANTUM-WELLS - FROM LOCALIZED TO FREE RESONANT STATES [J].

KAVOKIN, AV .

PHYSICAL REVIEW B, 1994, 50 (11) :8000-8003

[8] Nonlinear optics of normal-mode-coupling semiconductor microcavities [J].

Khitrova, G ;

Gibbs, HM ;

Jahnke, F ;

Kira, M ;

Koch, SW .

REVIEWS OF MODERN PHYSICS, 1999, 71 (05) :1591-1639

[9] Picosecond beats in coherent optical spectra of semiconductor heterostructures: photonic Bloch and exciton-polariton oscillations [J].

Malpuech, G ;

Kavokin, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (03) :R1-R23

[10]

PORT R, 2001, PHYS REV B, V63, DOI UNSP 235310

← 1 2 →