Zn-ln-O based thin-film transistors: Compositional dependence

被引：61

作者：

Itagaki, N. ^{[1
]}

Iwasaki, T. ^{[1
]}

Kumomi, H. ^{[1
]}

Den, T. ^{[2
]}

Nomura, K. ^{[3
]}

Kamiya, T. ^{[3
,4
]}

Hosono, H. ^{[3
,4
]}

机构：

[1] Canon Inc, Core Technol Dev Headquarters, Ohta Ku, Tokyo 1468501, Japan

[2] Canon Inc, Frontier Res Headquarters, Ohta Ku, Tokyo 1468501, Japan

[3] Tokyo Inst Technol, Japan Sci & Technol Agcy, ERATO SORST, Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 08期

关键词：

D O I：

10.1002/pssa.200778909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The compositional dependence of sputter-deposited Zn-In-O (ZIO) film properties and the TFT performance were studied by means of a combinatorial technique. Both the characteristics of ZIO TFTs and the ZIO film properties are very sensitive to the Zn:In ratio. The best TFT performances are obtained at Zn:In similar to 60:40 at%, where the saturation mobility (mu(sat)), subthreshold swing (S.S.), on-off current ratio (I-on/I-off), and threshold voltage (V-th) are 26.5 cm(2)/Vs, 0.24 V/dec., 10(10), and +2 V, respectively. The TFT characteristics speak at this compositional ratio. Specifically, mu(sat), I-on/I-off and V-th reach maximum, while S.S. reaches minimum at this ratio. The air stability of ZIO-TFTs was also examined for active channel layers with different Zn:In ratios, which clarified that the TFTs with high stability are obtained around the same composition ration where the best characteristics are obtained. It was confirmed by X-ray diffraction and transmission electron microscopy that the ZIO films with this composition ratio have amorphous structure. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1915 / 1919

页数：5

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