Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

被引：227

作者：

Iwasaki, Tatsuya

Itagaki, Naho

Den, Tohru

Kumomi, Hideya

Nomura, Kenji

Kamiya, Toshio

Hosono, Hideo

机构：

[1] Canon Inc, Canon Res Ctr, Ohta Ku, Kyoto 1468501, Japan

[2] Tokyo Inst Technol, ERATO SORST, Japan Sci & Technol Agcy, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

关键词：

D O I：

10.1063/1.2749177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n-type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications. (c) 2007 American Institute of Physics.

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相关论文

共 14 条

[1] Combinatorial libraries of semiconductor gas sensors as inorganic electronic noses [J].

Aronova, MA ;

Chang, KS ;

Takeuchi, I ;

Jabs, H ;

Westerheim, D ;

Gonzalez-Martin, A ;

Kim, J ;

Lewis, B .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1255-1257

[2] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[3] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[4] Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors [J].

Hoffman, R. L. .

SOLID-STATE ELECTRONICS, 2006, 50 (05) :784-787

[5] Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application [J].

Hosono, Hideo .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :851-858

[6] Combinatorial solid-state chemistry of inorganic materials [J].

Koinuma, H ;

Takeuchi, I .

NATURE MATERIALS, 2004, 3 (07) :429-438

[7]

Mitzi DB, 2003, THIN-FILM TRANSISTORS, P475

[8] Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability [J].

Miyasako, T ;

Senoo, M ;

Tokumitsu, E .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[9] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[10] Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O:: Experiment and ab initio calculations [J].

Nomura, Kenji ;

Kamiya, Toshio ;

Ohta, Hiromichi ;

Uruga, Tomoya ;

Hirano, Masahiro ;

Hosono, Hideo .

PHYSICAL REVIEW B, 2007, 75 (03)