Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

被引：118

作者：

Miyasako, T ^{[1
]}

Senoo, M ^{[1
]}

Tokumitsu, E ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期

关键词：

D O I：

10.1063/1.1905800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferroelectric Bi4-xLaxTi3O12 (BLT) as a gate insulator. We have obtained a typical n-channel transistor property with clear current saturation in drain current and drain voltage (I-D- V-D) characteristics. The obtained on/off current ratio is more than 10(4) and the field-effect mobility is estimated 9.1 cm(2)/Vs. In particular, we demonstrate a large "on"-current of 2.5 mA in ITO/BLT structure TFT in spite of the low channel mobility. This is because the ferroelectric film can induce large charge density due to the spontaneous polarization. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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