Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

被引：165

作者：

Kwon, Y

Li, Y

Heo, YW

Jones, M

Holloway, PH

Norton, DP ^{[1
]}

Park, ZV

Li, S

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1695437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline ZnO doped with Mg, to increase the band gap, and P, to decrease the electron carrier concentration. Devices are realized that display an on/off ratio of 10(3) and a channel mobility on the order of 5 cm(2)/V s. HfO2 serves as the gate dielectric. Capacitance-voltage properties measured across the gate indicate that the ZnO channel is n type. The use of acceptor doping improves the control of the initial channel conductance while having a minimal impact on channel mobility relative to undoped ZnO polycrystalline channels. (C) 2004 American Institute of Physics.

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页码：2685 / 2687

页数：3

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