Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

被引:62
作者
Arulkumaran, S
Sakai, M
Egawa, T
Ishikawa, H
Jimbo, T
Shibata, T
Asai, K
Sumiya, S
Kuraoka, Y
Tanaka, M
Oda, O
机构
[1] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] NGK Insulators Ltd, Thin Film Applicat Project, Mizuho Ku, Nagoya, Aichi 4678530, Japan
关键词
D O I
10.1063/1.1498874
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room temperature. Better dc characteristics with high extrinsic transconductances and drain current densities were observed in the HEMTs grown on AlN/sapphire templates when compared with the HEMTs on sapphire substrates. Extrinsic transconductances of 214 and 137 mS/mm for W-g/L-g=15/2 mum HEMTs on AlN/sapphire templates and HEMTs on sapphire substrates were achieved, respectively. The enhancement of dc characteristics with small variations in threshold voltage (less than or equal to130 mV) is due to the reduction of dislocation density (1.5x10(8) cm(-2)). The decrease of dark spot density has been confirmed in the GaN grown on AlN/sapphire templates using cathodoluminescence measurements. The advantage of using AlN/sapphire templates is that low dislocation density GaN layers at a high temperature can be grown without using low-temperature-grown GaN buffer layers. (C) 2002 American Institute of Physics.
引用
收藏
页码:1131 / 1133
页数:3
相关论文
共 16 条
[1]   High-transconductance AlGaN/GaN high-electron-mobility transistors on semi-insulating silicon carbide substrate [J].
Arulkumaran, S ;
Egawa, T ;
Ishikawa, H ;
Jimbo, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10B) :L1081-L1083
[2]   Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire [J].
Egawa, T ;
Zhao, GY ;
Ishikawa, H ;
Umeno, M ;
Jimbo, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :603-608
[3]   High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy [J].
Elsass, CR ;
Smorchkova, IP ;
Heying, B ;
Haus, E ;
Fini, P ;
Maranowski, K ;
Ibbetson, JP ;
Keller, S ;
Petroff, PM ;
DenBaars, SP ;
Mishra, UK ;
Speck, JS .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3528-3530
[4]   Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN [J].
Iwaya, M ;
Takeuchi, T ;
Yamaguchi, S ;
Wetzel, C ;
Amano, H ;
Akasaki, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L316-L318
[5]   Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire [J].
Johnson, JW ;
Han, J ;
Baca, AG ;
Briggs, RD ;
Shul, RJ ;
Wendt, JR ;
Monier, C ;
Ren, F ;
Luo, B ;
Chu, SNG ;
Tsvetkov, D ;
Dmitriev, V ;
Pearton, SJ .
SOLID-STATE ELECTRONICS, 2002, 46 (04) :513-523
[6]   Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB [J].
Keller, S ;
Wu, YF ;
Parish, G ;
Ziang, NQ ;
Xu, JJ ;
Keller, BP ;
DenBaars, SP ;
Mishra, UK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :552-559
[8]  
Kim JW, 2001, PHYS STATUS SOLIDI A, V188, P267, DOI 10.1002/1521-396X(200111)188:1<267::AID-PSSA267>3.0.CO
[9]  
2-9
[10]   Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors [J].
McCarthy, L ;
Smorchkova, I ;
Xing, H ;
Fini, P ;
Keller, S ;
Speck, J ;
DenBaars, SP ;
Rodwell, MJW ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2001, 78 (15) :2235-2237