Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN

被引：187

作者：

Iwaya, M ^{[1
]}

Takeuchi, T ^{[1
]}

Yamaguchi, S ^{[1
]}

Wetzel, C ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 3B期

关键词：

GaN; screw dislocations; etch pit; low-temperature-deposited buffer layer;

D O I：

10.1143/JJAP.37.L316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by the insertion of either a low-temperature-deposited AlN buffer layer or GaN buffer layer between high-temperature-grown-GaN on sapphire.

引用

页码：L316 / L318

页数：3

共 27 条

[1] AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517
[2] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE
AKASAKI, I
AMANO, H
KOIDE, Y
HIRAMATSU, K
SAWAKI, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) : 209 - 219
[3] Shortest wavelength semiconductor laser diode
Akasaki, I
Sota, S
Sakai, H
Tanaka, T
Koike, M
Amano, H
[J]. ELECTRONICS LETTERS, 1996, 32 (12) : 1105 - 1106
[4] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[5] BULMAN GE, 1997, DEV RES C
[6] 75 angstrom GaN channel modulation doped field effect transistors
Burm, J
Schaff, WJ
Eastman, LF
Amano, H
Akasaki, I
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (20) : 2849 - 2851
[7] Observation of coreless dislocations in alpha-GaN
Cherns, D
Young, WT
Steeds, JW
Ponce, FA
Nakamura, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 201 - 206
[8] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE
DINGLE, R
SHAKLEE, KL
LEHENY, RF
ZETTERSTROM, RB
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +
[9] GROWTH-MECHANISM OF GAN GROWN ON SAPPHIRE WITH ALN BUFFER LAYER BY MOVPE
HIRAMATSU, K
ITOH, S
AMANO, H
AKASAKI, I
KUWANO, N
SHIRAISHI, T
OKI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 628 - 633
[10] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
Itaya, K
Onomura, M
Nishio, J
Sugiura, L
Saito, S
Suzuki, M
Rennie, J
Nunoue, SY
Yamamoto, M
Fujimoto, H
Kokubun, Y
Ohba, Y
Hatakoshi, G
Ishikawa, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B): : L1315 - L1317

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