Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

被引：520

作者：

Fortunato, EMC

Barquinha, PMC

Pimentel, ACMBG

Gonçalves, AMF

Marques, AJS

Martins, RFP

Pereira, LMN

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP UNINOVA, P-2829516 Caparica, Portugal

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 13期

关键词：

D O I：

10.1063/1.1790587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a saturation mobility of 27 cm(2)/V s, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3x10(5). The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics. (C) American Institute of Physics.

引用

页码：2541 / 2543

页数：3

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