Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances

被引:71
作者
Martin, S [1 ]
Chiang, CS
Nahm, JY
Li, T
Kanicki, J
Ugai, Y
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Hosiden & Philips Display Corp, Nishi Ku, Kobe, Hyogo 65122, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 2A期
关键词
amorphous silicon; thin-film transistor; top-gate; series resistances; field-effect mobility; field-effect activation energy;
D O I
10.1143/JJAP.40.530
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have analyzed the influence of the hydrogenated amorphous silicon (a-Si:H) thickness on the electrical performances of top eats thin-film transistors (TFTs). We have observed that, when the a-Si:H thickness increases, the threshold voltage and the subthreshold slope decrease. The modification of the TFT apparent field-effect mobility has also been investigated: we have shown that it first increases with the a-Si:H thickness, and then decreases for thicker a-Si:H films. This change of electrical performances is most likely associated with both the variation of a-Si:H microstructure during the film depositions and the effect of parasitic source and drain series resistances. We have demonstrated that for a given TFT geometry, it is therefore possible to define an optimum a-Si:H thickness ensuring maximum TFT electrical performances, and that this optimum thickness increases significantly with the TFT channel length.
引用
收藏
页码:530 / 537
页数:8
相关论文
共 20 条
[1]   SELF-ALIGNED BOTTOM-GATE SUBMICROMETER-CHANNEL-LENGTH A-SI-H THIN-FILM TRANSISTORS [J].
BUSTA, HH ;
POGEMILLER, JE ;
STANDLEY, RW ;
MACKENZIE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2883-2888
[2]  
CHEN CY, 1996, MAT RES S P, P424
[3]   Top-gate staggered amorphous silicon thin-film transistors: Series resistance and nitride thickness effects [J].
Chiang, CS ;
Martin, S ;
Kanicki, J ;
Ugai, Y ;
Yukawa, T ;
Takeuchi, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (11) :5914-5920
[4]  
CHIANG CS, 1998, SID 98 P, P383
[5]  
*DAWN TECHN, 1994, SEM DEV SIM
[6]   SOME ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON AMORPHOUS-SILICON NITRIDE INTERFACES - TOP NITRIDE AND BOTTOM NITRIDE CONFIGURATIONS IN MNS AND TFT DEVICES [J].
GODET, C ;
KANICKI, J ;
GELATOS, AV .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :5022-5032
[7]   THICKNESS DEPENDENCE OF ELECTRICAL AND OPTICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED A-SI-H [J].
HASEGAWA, S ;
IMAI, Y .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03) :239-251
[8]   PERFORMANCE OF THIN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
KANICKI, J ;
LIBSCH, FR ;
GRIFFITH, J ;
POLASTRE, R .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2339-2345
[9]   THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS [J].
KISHIDA, S ;
NARUKE, Y ;
UCHIDA, Y ;
MATSUMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03) :511-517
[10]  
LECONTELLEC M, 1987, J NONCRYST SOLIDS, V97, P287