Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances

被引：71

作者：

Martin, S ^{[1
]}

Chiang, CS

Nahm, JY

Li, T

Kanicki, J

Ugai, Y

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Hosiden & Philips Display Corp, Nishi Ku, Kobe, Hyogo 65122, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 2A期

关键词：

amorphous silicon; thin-film transistor; top-gate; series resistances; field-effect mobility; field-effect activation energy;

D O I：

10.1143/JJAP.40.530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed the influence of the hydrogenated amorphous silicon (a-Si:H) thickness on the electrical performances of top eats thin-film transistors (TFTs). We have observed that, when the a-Si:H thickness increases, the threshold voltage and the subthreshold slope decrease. The modification of the TFT apparent field-effect mobility has also been investigated: we have shown that it first increases with the a-Si:H thickness, and then decreases for thicker a-Si:H films. This change of electrical performances is most likely associated with both the variation of a-Si:H microstructure during the film depositions and the effect of parasitic source and drain series resistances. We have demonstrated that for a given TFT geometry, it is therefore possible to define an optimum a-Si:H thickness ensuring maximum TFT electrical performances, and that this optimum thickness increases significantly with the TFT channel length.

引用

页码：530 / 537

页数：8

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