THE INFLUENCE OF THE FILM SUBSTRATE INTERFACE ON THE DEFECT DENSITY AND OTHER PROPERTIES OF SPUTTER-DEPOSITED AMORPHOUS HYDROGENATED SILICON

被引：5

作者：

SOPKA, J

SCHNEIDER, U

SCHRODER, B

FAVRE, M

FINGER, F

OECHSNER, H

机构：

[1] UNIV NEUCHATEL,INST MICROTECHN,CH-2000 NEUCHATEL,SWITZERLAND

[2] UNIV MARBURG,FACHBEREICH PHYS,W-3550 MARBURG,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2848 / 2852

页数：5

共 14 条

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