PHOTOTHERMAL AND PHOTOCONDUCTIVE DETERMINATION OF SURFACE AND BULK DEFECT DENSITIES IN AMORPHOUS-SILICON FILMS

被引：127

作者：

SMITH, ZE ^{[1
]}

CHU, V ^{[1
]}

SHEPARD, K ^{[1
]}

ALJISHI, S ^{[1
]}

SLOBODIN, D ^{[1
]}

KOLODZEY, J ^{[1
]}

WAGNER, S ^{[1
]}

CHU, TL ^{[1
]}

机构：

[1] SO METHODIST UNIV,DEPT ELECT ENGN,DALLAS,TX 75275

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 21期

关键词：

D O I：

10.1063/1.97819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1521 / 1523

页数：3

共 22 条

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[5]

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[10] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

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