HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED IN A HELIUM ATMOSPHERE

被引：11

作者：

CHU, TL ^{[1
]}

CHU, SS ^{[1
]}

ANG, ST ^{[1
]}

DUONG, A ^{[1
]}

HAN, YX ^{[1
]}

LIU, YH ^{[1
]}

机构：

[1] POLY SOLAR INC,GARLAND,TX 75041

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.337467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4268 / 4272

页数：5

共 15 条

[1] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J].

AKHTAR, M ;

DALAL, VL ;

RAMAPRASAD, KR ;

GAU, S ;

CAMBRIDGE, JA .

APPLIED PHYSICS LETTERS, 1982, 41 (12) :1146-1148

[2]

CHU T, UNPUB

[3] DEPOSITION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON FILMS BY THE PYROLYSIS OF DISILANE [J].

CHU, TL ;

CHU, SS ;

ANG, ST ;

LO, DH ;

DUONG, A ;

HWANG, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1319-1322

[4] DENSITY OF GAP STATES IN CHEMICAL-VAPOR-DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS [J].

CHU, TL ;

CHU, SS ;

ANG, ST ;

DUONG, A ;

HWUANG, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3122-3125

[5] CHEMICAL ETCHING FOR THE EVALUATION OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].

CHU, TL ;

CHU, SS .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1783-1784

[6] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[7] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J].

ELLIS, FB ;

GORDON, RG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5381-5384

[8] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

ELLIS, FB ;

GORDON, RG ;

PAUL, W ;

YACOBI, BG .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4309-4317

[9] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

WEINBERGER, BR ;

AKHTAR, M ;

KISS, Z ;

MACDIARMID, AG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438

[10] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

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