DENSITY OF GAP STATES IN CHEMICAL-VAPOR-DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：1

作者：

CHU, TL ^{[1
]}

CHU, SS ^{[1
]}

ANG, ST ^{[1
]}

DUONG, A ^{[1
]}

HWUANG, CG ^{[1
]}

机构：

[1] POLY SOLAR INC,GARLAND,TX 75041

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.336889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3122 / 3125

页数：4

共 9 条

[1]

AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83

[2] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES [J].

ASHOK, S ;

LESTER, A ;

FONASH, SJ .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :200-202

[3] DEPOSITION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON FILMS BY THE PYROLYSIS OF DISILANE [J].

CHU, TL ;

CHU, SS ;

ANG, ST ;

LO, DH ;

DUONG, A ;

HWANG, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1319-1322

[4] CALCULATION OF THE DYNAMIC-RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATES [J].

COHEN, JD ;

LANG, DV .

PHYSICAL REVIEW B, 1982, 25 (08) :5321-5350

[5] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J].

ELLIS, FB ;

GORDON, RG .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5381-5384

[6] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1) [J].

GAU, SC ;

WEINBERGER, BR ;

AKHTAR, M ;

KISS, Z ;

MACDIARMID, AG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :436-438

[7]

HEGEDUS SS, 1984, 17TH P IEEE PHOT SPE, P239

[8] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[9] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

MACKENZIE, KD ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04) :377-389

← 1 →