SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE

被引：32

作者：

ELLIS, FB

GORDON, RG

机构：

来源：

关键词：

D O I：

10.1063/1.332717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5381 / 5384

页数：4

共 13 条

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[8] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1)
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[9] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS
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[10] KINETICS AND MECHANISM OF AMORPHOUS HYDROGENATED SILICON GROWTH BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION
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