ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION

被引：30

作者：

AKHTAR, M

DALAL, VL

RAMAPRASAD, KR

GAU, S

CAMBRIDGE, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 12期

关键词：

D O I：

10.1063/1.93414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1146 / 1148

页数：3

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[1] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON
CARLSON, DE
WRONSKI, CR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106
[2] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON
CRANDALL, RS
[J]. PHYSICAL REVIEW B, 1981, 24 (12): : 7457 - 7459
[3] THE CHEMISTRY OF THE HIGHER SILANES .1. TETRASILANE
EMELEUS, HJ
MADDOCK, AG
[J]. JOURNAL OF THE CHEMICAL SOCIETY, 1946, (DEC): : 1131 - 1134
[4] PREPARATION OF AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANES SINH2N+2(NGREATER-THAN1)
GAU, SC
WEINBERGER, BR
AKHTAR, M
KISS, Z
MACDIARMID, AG
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 436 - 438
[5] HORIZONTALLY MULTI-LAYERED A-SI PHOTO-VOLTAIC CELLS - NEW TYPE OF HIGH-VOLTAGE PHOTO-VOLTAIC DEVICE
HAMAKAWA, Y
OKAMOTO, H
NITTA, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 749 - 754
[6] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
HAYAMA, H
MATSUMURA, M
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755
[7] THEORETICAL CONSIDERATIONS GOVERNING THE CHOICE OF THE OPTIMUM SEMICONDUCTOR FOR PHOTOVOLTAIC SOLAR ENERGY CONVERSION
LOFERSKI, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) : 777 - 784
[8] VIBRATIONAL SPECTROSCOPY OF HYDROGENATED AMORPHOUS-SILICON ALLOYS
LUCOVSKY, G
[J]. SOLAR CELLS, 1980, 2 (04): : 431 - 442
[9] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SI-F-H ALLOYS
MADAN, A
OVSHINSKY, SR
BENN, E
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (04): : 259 - 277
[10] GLOW-DISCHARGE PREPARATION OF AMORPHOUS HYDROGENATED SILICON FROM HIGHER SILANES
SCOTT, BA
BRODSKY, MH
GREEN, DC
KIRBY, PB
PLECENIK, RM
SIMONYI, EE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 725 - 727