CHEMICAL ETCHING FOR THE EVALUATION OF HYDROGENATED AMORPHOUS-SILICON FILMS

[1] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1146 - 1148

[2] CHU T, UNPUB

[3] DEPOSITION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON FILMS BY THE PYROLYSIS OF DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1319 - 1322

[4] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5381 - 5384

[5] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 249 - 256

[6] Pankove J.I., 1984, SEMICONDUCTORS SEM B, V21B

[7] PANKOVE JI, 1984, SEMICONDUCTORS SEM C, V21

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[1] ELECTRONIC AND OPTICAL-PROPERTIES OF AMORPHOUS SI-H FILMS DEPOSITED BY CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (12) : 1146 - 1148

[2] CHU T, UNPUB

[3] DEPOSITION AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON FILMS BY THE PYROLYSIS OF DISILANE [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1319 - 1322

[4] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5381 - 5384

[5] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 249 - 256

[6] Pankove J.I., 1984, SEMICONDUCTORS SEM B, V21B

[7] PANKOVE JI, 1984, SEMICONDUCTORS SEM C, V21

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &