CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON

[1] CARLSON DE, 1984, 17TH IEEE PHOT SPEC, P330

[2] OPTICAL-ABSORPTION ABOVE THE OPTICAL GAP OF AMORPHOUS-SILICON HYDRIDE [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 231 - 240

[3] CORDERMAN R, COMMUNICATION

[4] MASS-SPECTROMETRIC STUDIES OF IMPURITIES IN SILANE AND THEIR EFFECTS ON THE ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3987 - 3992

[5] COTTON FA, 1972, ADV INORGANIC CHEM, P237

[6] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (179): : 903 - &

[7] IMPURITIES IN SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 677 - 687

[8] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5381 - 5384

[9] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4309 - 4317

[10] RELATIONSHIP BETWEEN COLLECTION LENGTH AND DIFFUSION LENGTH IN AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 613 - 615

[1] CARLSON DE, 1984, 17TH IEEE PHOT SPEC, P330

[2] OPTICAL-ABSORPTION ABOVE THE OPTICAL GAP OF AMORPHOUS-SILICON HYDRIDE [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 231 - 240

[3] CORDERMAN R, COMMUNICATION

[4] MASS-SPECTROMETRIC STUDIES OF IMPURITIES IN SILANE AND THEIR EFFECTS ON THE ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3987 - 3992

[5] COTTON FA, 1972, ADV INORGANIC CHEM, P237

[6] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (179): : 903 - &

[7] IMPURITIES IN SILICON SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 677 - 687

[8] SIMPLE METHOD FOR PREPARING HYDROGENATED AMORPHOUS-SILICON FILMS BY CHEMICAL VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5381 - 5384

[9] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4309 - 4317

[10] RELATIONSHIP BETWEEN COLLECTION LENGTH AND DIFFUSION LENGTH IN AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 613 - 615