New challenges on gallium-doped zinc oxide films prepared by r.f. magnetron sputtering

被引：86

作者：

Assunçao, V

Fortunato, E

Marques, A

Gonçalves, A

Ferreira, I

Aguas, H

Martins, R

机构：

[1] Univ Nova Lisboa, FCT, Dept Mat Sci, CENIMAT, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

来源：

THIN SOLID FILMS | 2003年 / 442卷 / 1-2期

关键词：

zinc oxide; sputtering; electrical properties and measurements; optical properties;

D O I：

10.1016/S0040-6090(03)00955-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium-doped zinc oxide films were prepared by r.f. magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7 X 10(-4) Omega cm, a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3) were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of approximately 85%, on average. (C) 2003 Elsevier B.V. All rights reserved.

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页码：102 / 106

页数：5

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