High efficiency InGaP/InGaAs tandem solar cells on Ge substrates

被引：29

作者：

Takamoto, T ^{[1
]}

Agui, T ^{[1
]}

Ikeda, E ^{[1
]}

Kurita, H ^{[1
]}

机构：

[1] Japan Energy Corp, Toda, Saitama 335, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916049

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Over 30% AM1.5G efficiency was achieved by adding a small quantity of Indium into a GaAs bottom cell in the conventional tandem cell on a Ge substrate. Characteristics of InGaAs cells on Ge were investigated by varying In-composition. The maximum efficiency was obtained for the cell with 0.01 In-composition, which was lattice-matched to Ge and produced no misfit-dislocations. Relatively high efficiencies were obtained for the cells with In-compositions less than 0.1, which did not produce cracks but misfit-dislocations. InGaP/InxGa1-x As tandem cells with In-composition x between 0.01 and 0.07 demonstrated higher efficiency than the conventional InGaP/GaAs cells, that was attributed to an increase in photo-currents both in the top and bottom cells. Remarkably, an In0.49Ga0.51P/In0.01Ga0.99As tandem cell lattice-matched to Ge showed an improvement in Voc which was attributed to an elimination of misfit-dislocations in thick GaAs layers. Also, those InGaP/InxGa1-xAs cells with low In-compositions were found to be favorable for improving efficiency of triple junction cells using Ge cells. Over 31% AM1.5G efficiency was demonstrated for the InGaP/InxGa1-xAs/Ge triple-junction cells with In-composition x of 0.01 and 0.06, at present.

引用

页码：976 / 981

页数：6

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