Dielectric properties of (Ba0.8Sr0.2)(ZrxTi1-x)O3 thin films grown by pulsed-laser deposition

被引：53

作者：

Cheng, BL ^{[1
]}

Wang, C ^{[1
]}

Wang, SY ^{[1
]}

Lu, HB ^{[1
]}

Zhou, YL ^{[1
]}

Chen, ZH ^{[1
]}

Yang, GZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2005年 / 25卷 / 12期

基金：

中国国家自然科学基金;

关键词：

dielectric properties; perovskite; (Ba; Sr)(Zr; Ti)O-3;

D O I：

10.1016/j.jeurceramsoc.2005.03.049

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of (Ba0.8Sr0.2)(ZrTi1-x)O-3 (x=0, 0.08, 0.18, 0.36) were grown on Pt/TiO2/SiO2/Si substrate at temperature of 550 degrees C by pulsed-laser deposition. XRD patterns show that the thin films are well crystallized into perovskite structure. Electric properties of the thin films, including the dielectric constant, dielectric loss, tunability, polarization loops, and leakage current, were investigated. With an increasing of Zr content, the tunability of dielectric constant and ferroelectric polarization of the thin films decrease and the ferroelectricity disappears. Significantly, it is found that the dielectric loss and leakage current of thin films are reduced by the substitution of Ti with Zr. Furthermore, the leakage current is decreased about three-order of magnitude for an electric field of 100 kV/cm with increasing of Zr content. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：2295 / 2298

页数：4

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