Preparation of BaTiO3-BaZrO3 films by metal-organic chemical vapor deposition

Barium titanate zirconate (Ba(Ti1-xZrx)O-3) films in the range of x = 0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content (x) on the microstructure and dielectric properties of films were investigated. At x less than or equal to 0.15, the Ba(Ti1-xZrx)O-3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x, and the orientation became random at x > 0.36. The dielectric constant of Ba(Ti1-xZrx)O-3 films changed with x from 35 to 689 and showed a maximum at x 0.15. The remanent polarization (2P(r)) and the coercive field (2E(C)) of Ba(Ti0.85Zr0.15)O-3 film were 3 muC(.)cm(-2) and 14kV(.)cm(-1), respectively. The onset electric field for nonohmic conduction of Ba(Ti1-xZrx)03 film increased from 10k to 1 MV(.)cm(-1) with increasing x.