Hydrogen release related to hole injection into SiO2 layers on Si

被引：8

作者：

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

silicon dioxide; radiolytic hydrogen; proton; charge injection; charge trapping; defects;

D O I：

10.1016/S1369-8001(00)00151-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The release of atomic H during charge injection into SiO2 layers thermally grown on silicon was monitored by measuring the H-induced decrease in the concentration of active boron accepters at the Si surface. It is found that H is set free both upon trapping of holes in the oxide and upon their neutralization by electron injection. The H+ release upon hole trapping correlates with the generation of paramagnetic E ' centers in the oxide (O-3=Si . defects) unveiling the hole trapping on Si-H bonds as the primary H liberation mechanism in SiO2. The additional H liberation upon neutralization of the positive charge created by hole injection suggests that a large portion of this charge is due to protons trapped in the oxide, which, upon electron trapping, are released as atomic H. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：149 / 151

页数：3

共 19 条

[1] Hydrogen-related leakage currents induced in ultrathin SiO2/Si structures by vacuum ultraviolet radiation [J].