Solid-phase reactions and the order-disorder phase transition in thin films

被引：3

作者：

Myagkov, VG ^{[1
]}

Bykova, LE ^{[1
]}

Bondarenko, GN ^{[1
]}

Bondarenko, GV ^{[1
]}

Myagkov, FV ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia

来源：

TECHNICAL PHYSICS | 2001年 / 46卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1379645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative analysis was carried out of the initiation temperatures of solid-phase reactions in bilayer solid films and the Kurnakov temperatures of the phases forming in the reaction products. It has been shown that in superstructures where ordering is usually observed, the Kurnakov temperature coincides with the initiation temperature of the solid-phase reactions if no other solid-phase structural transformation precedes the order-disorder phase transition in the state diagram. A rule was proposed by which pairs of films capable of entering into solid-phase reactions and their initiation temperatures can be determined. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：743 / 748

页数：6

共 28 条

[21] Self-propagating high-temperature synthesis in Pt/Co/MgO(001) epitaxial thin films [J].

Myagkov, VG ;

Li, LA ;

Bykova, LE ;

Turpanov, IA ;

Kim, PD ;

Bondarenko, GV ;

Bondarenko, GN .

PHYSICS OF THE SOLID STATE, 2000, 42 (05) :968-972

[22]

Myagkov VG, 1997, DOKL AKAD NAUK+, V354, P777

[23] Solid-phase reactions, self-propagating high-temperature synthesis, and order-disorder phase transition in thin films [J].

Myagkov, VG ;

Bykova, LE ;

Bondarenko, GN ;

Zhigalov, VS ;

Pol'skii, AI ;

Myagkov, FV .

JETP LETTERS, 2000, 71 (05) :183-186

[24] FORMATION OF METAL-RICH SILICIDES IN THE INITIAL-STAGE OF INTERFACIAL REACTIONS IN NB/SI SYSTEMS [J].

NAKANISHI, T ;

TAKEYAMA, M ;

NOYA, A ;

SASAKI, K .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :948-950

[25]

Poate JM, 1978, THIN FILMS INTERDIFF

[26]

SINGH R, 1988, J APPL PHYS, V63, P59

[27] CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT THE IR/SI INTERFACE [J].

WITTMER, M ;

OELHAFEN, P ;

TU, KN .

PHYSICAL REVIEW B, 1987, 35 (17) :9073-9084

[28] Initial phase formation in Nb/Si multilayers deposited at different temperatures [J].

Zhang, M ;

Yu, W ;

Wang, WH ;

Wang, WK .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1422-1427

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