N-type field-effect transistor based on a fluorinated-graphene

被引：50

作者：

Mori, Tomohiko ^{[1
]}

Kikuzawa, Yoshihiro ^{[1
]}

Takeuchi, Hisato ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 03期

关键词：

OFET; hexabenzocoronene; graphene;

D O I：

10.1016/j.orgel.2008.01.002

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

A fluorinated-graphene, 2,5,8,11,14,17-hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC), has been synthesized. 6F-HBC was deposited by vacuum sublimation as an active layer in an organic field-effect transistor (OFET). The OFET with 6F-HBC performed as an n-type semiconductor, while that with hexa-peri-hexabenzocoronene (HBC) performed as a p-type semiconductor. The electron field-effect mobility and on/off ratio for 6F-HBC were 1.6 x 10(-2) cm(2)/Vs and 10(4), respectively. Hexafluoro-substituting reduces both the highest occupied molecular orbital and lowest unoccupied molecular orbital levels by 0.5 eV, which is suitable for electron injection from the electrode. 6F-HBC has a face-to-face structure which is a preferable crystal structure for carrier transport. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：328 / 332

页数：5

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