Perfluoropentacene: High-performance p-n junctions and complementary circuits with pentacene

被引：679

作者：

Sakamoto, Y

Suzuki, T ^{[1
]}

Kobayashi, M

Gao, Y

Fukai, Y

Inoue, Y

Sato, F

Tokito, S

机构：

[1] Inst Mol Sci, Okazaki, Aichi 4448787, Japan

[2] Kanto Denka Kogyo Co Ltd, New Prod Dev Div, Chiyoda Ku, Tokyo 1000005, Japan

[3] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2004年 / 126卷 / 26期

关键词：

D O I：

10.1021/ja0476258

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the synthesis and characterization of perfluoropentacene as an n-type semiconductor for organic field-effect transistors (OFETs). Perfluoropentacene is a planar and crystalline material that adopts a herringbone structure as observed for pentacene. OFETs with perfluoropentacene were constructed using top-contact geometry, and an electron mobility of 0.11 cm2 V-1 s-1 was observed. Bipolar OFETs with perfluoropentacene and pentacene function at both negative and positive gate voltages. The improved p-n junctions are probably due to the similar d-spacings of both acenes. Complementary inverter circuits were fabricated, and the transfer characteristics exhibit a sharp inversion of the output signal with a high-voltage gain. Copyright © 2004 American Chemical Society.

引用

页码：8138 / 8140

页数：3

共 26 条

[1] High-performance, solution-processed organic thin film transistors from a novel pentacene precursor [J].