Highly doped Nd:YAG crystal used for microchip lasers

被引：32

作者：

Dong, J

Deng, P

Gan, F

Urata, Y

Hua, R

Wada, S

Tashiro, H

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

OPTICS COMMUNICATIONS | 2001年 / 197卷 / 4-6期

基金：

中国国家自然科学基金;

关键词：

highly doped Nd : YAG; temperature gradient technology; microchip lasers;

D O I：

10.1016/S0030-4018(01)01473-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The highly doped Nd:YAG (Nd concentration as high as 3 at.%) crystals were grown by the temperature gradient technology. The spectral properties of these highly doped Nd:YAG crystals were reported and compared with that of the traditional Nd:YAG (1.1 at.% Nd) grown by the Czochralski method. Although concentration quenching exists in highly doped Nd:YAG crystals, the laser performances have demonstrated that highly doped Nd:YAG crystals have the advantages over that of the traditional grown Nd:YAG such as efficiencies, especially used in microchip lasers. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：413 / 418

页数：6

共 7 条

[1] TEMPERATURE-TUNABLE, SINGLE FREQUENCY MICROCAVITY LASERS FABRICATED FROM FLUX-GROWN YCEAGND [J].