Single-phase hexagonal GaN grown on AlAs/GaAs(001)

被引：8

作者：

Funato, M ^{[1
]}

Ishido, T ^{[1
]}

Hamaguchi, A ^{[1
]}

Fujita, S ^{[1
]}

Fujita, S ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.126938

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes successful growth of single-phase hexagonal GaN (h-GaN) layers on cubic GaAs(001) nominally singular substrates with the assistance of thin AlAs intermediate layers. The crystallographic relationship between h-GaN and GaAs is extracted from a pole figure to be h-GaN[0001]parallel to GaAs[001] in the growth direction and h-GaN[10(1) over bar 0]parallel to GaAs[<1(1)over bar>0] in the in-plane direction. In a photoluminescence spectrum measured at 20 K, excitonic emission from the h-GaN layer is detected at 3.47 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)05328-6].

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页码：244 / 246

页数：3

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