Thick and smooth hexagonal GaN growth on GaAs (111) substrates at 1000°C with halide vapor phase epitaxy

被引：26

作者：

Hasegawa, F ^{[1
]}

Minami, M ^{[1
]}

Sunaba, K ^{[1
]}

Suemasu, T ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期

关键词：

GaN; HVPE; GaAs substrate; thick GaN layer; GaN substrate; hydride vapor phase epitaxy;

D O I：

10.1143/JJAP.38.L700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at temperatures as high as 1000 degrees C by introducing a GaN layer grown at an intermediate temperature such as 850 degrees C with halide vapor phase epitaxy (HVPE). The surface of the GaN layer grown at 850 degrees C was rough but it became smooth surface when GaN was grown on it at 1000 degrees C; though sometimes there were several hexagonal pits on the surface. There Seems to be some surface Battening mechanism for hexagonal GaN growth at temperatures around or higher than 1000 degrees C. The theta-2 theta X-ray diffraction (XRD) of the grown layer showed only a hexagonal (0002) peak even for the layer grown at 850 degrees C, but the full width at half maximum (FWHM) of the omega scan was improved by the growth of hexagonal GaN at 1000 degrees C on it.

引用

页码：L700 / L702

页数：3

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