Violet InGaN/GaN/AIGaN-based laser diodes operable at 50°C with a fundamental transverse mode

被引：168

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Mukai, T ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 3A期

关键词：

InGaN; quantum well; laser; violet; transverse mode; lateral overgrowth;

D O I：

10.1143/JJAP.38.L226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A violet InGAN multi-quantum-well (MQW)/GaN/AlGaN separate-confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The threshold current density was 3.9 kA/cm(2). The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode in the near-field patterns was observed at an output power up to 30 mW. The lifetime of the LDs at a constant output power of 5 mW was mon: than 1,000 h under CW operation at an ambient temperature of 50 degrees C. The estimated lifetime was approximately 3,000 h under these high-power and high-temperature operating conditions.

引用

页码：L226 / L229

页数：4

共 16 条

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