Electron transport properties through InAs self-assembled quantum dots in modulation doped structures

被引：35

作者：

Horiguchi, N

Futatsugi, T

Nakata, Y

Yokoyama, N

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 17期

关键词：

D O I：

10.1063/1.118840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electron transport properties through InAs self-assembled quantum dots in a modulation-doped structure with split gates. We observed drain current modulation with respect to gate voltage due to electron transport through the quantum level of InAs dots. The energy gaps estimated from the temperature dependence study of valley current and the voltage difference between the drain current peaks were consistent with each other and as large as 14 meV. The energy gaps can be explained by the charging energy of the InAs dots. (C) 1997 American Institute of Physics.

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页码：2294 / 2296

页数：3

相关论文

共 20 条

[1] THEORY OF COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A QUANTUM DOT [J].

BEENAKKER, CWJ .

PHYSICAL REVIEW B, 1991, 44 (04) :1646-1656

[2] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[3] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS [J].

FAFARD, S ;

LEON, R ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (11) :8086-8089

[4] SELECTIVE EXCITATION OF THE PHOTOLUMINESCENCE AND THE ENERGY-LEVELS OF ULTRASMALL INGAAS/GAAS QUANTUM DOTS [J].

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1388-1390

[5]

GRUNDMANN M, 1996, APPL PHYS LETT, V68, P797

[6] Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots [J].

Heitz, R ;

Grundmann, M ;

Ledentsov, NN ;

Eckey, L ;

Veit, M ;

Bimberg, D ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI .

APPLIED PHYSICS LETTERS, 1996, 68 (03) :361-363

[7]

Krost A, 1996, APPL PHYS LETT, V68, P785, DOI 10.1063/1.116532

[8] NONMONOTONIC VARIATIONS OF THE CONDUCTANCE WITH ELECTRON-DENSITY IN APPROXIMATELY 70-NM-WIDE INVERSION-LAYERS [J].

KWASNICK, RF ;

KASTNER, MA ;

MELNGAILIS, J ;

LEE, PA .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :224-227

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719